FQP3N50C ,N-Channel QFET?MOSFETFeatures Description• 3 A, 500 V, R = 2.5 Ω @ V = 10 V These N-Channel enhancement mode power field ..
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FQP3N60C ,N-Channel QFET?MOSFET 600V,3A, 3.4?FeaturesThis N-Channel enhancement mode power MOSFET is ®produced using Fairchild Semiconductor ’s ..
FQP3N60C ,N-Channel QFET?MOSFET 600V,3A, 3.4?FQP3N60C N-Channel MOSFET March 2013FQP3N60C N-Channel QFET MOSFET 600 V, 3.0 A, 3.4 Ω Description
FQP3N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQP3N80800V N-Channel MOSFET
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FQP3N50C
N-Channel QFET?MOSFET
FQP3N50C/FQPF3N50C 500V N-Channel MOSFET ® QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description • 3 A, 500 V, R = 2.5 Ω @ V = 10 V These N-Channel enhancement mode power field effect transis- DS(on) GS tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 10 nC ) DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to mini- • Fast switching mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and • 100 % avalanche tested commutation mode. These devices are well suited for high effi- • Improved dv/dt capability ciency switched mode power supplies, active power factor cor- rection, electronic lamp ballasts based on half bridge topology. D {{{{{{{{ ●●●●●●●● ◀◀◀◀◀◀◀◀ ▲▲▲▲▲▲▲▲ ●●●●●●●● G{{{{{{{{ G ●●●●●●●● D TO-220 S TO-220F G D FQP Series S FQPF Series {{{{ {{{{ S Absolute Maximum Ratings Symbol Parameter FQP3N50C FQPF3N50C Units V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25°C) A D C 33 * - Continuous (T = 100°C) A C 1.8 1.8 * (Note 1) I Drain Current - Pulsed A DM 12 12 * V Gate-Source Voltage ± 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 200 mJ AS (Note 1) I Avalanche Current 3A AR (Note 1) E Repetitive Avalanche Energy 6.2 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25°C) W D C 62 25 - Derate above 25°C W/°C 0.5 0.2 T , T Operating and Storage Temperature Range -55 to +150 °C J STG T Maximum lead temperature for soldering purposes, 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQP3N50C FQPF3N50C Units R Thermal Resistance, Junction-to-Case 2.0 4.9 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θJS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W θJA ©2005 1 FQP3N50C/FQPF3N50C Rev. A
