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FQL40N50FSCN/a635avai500V N-Channel MOSFET


FQL40N50 ,500V N-Channel MOSFETFQL40N50May 2001TMQFETFQL40N50500V N-Channel MOSFET
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FQL40N50
500V N-Channel MOSFET
FQL40N50 May 2001 TM QFET FQL40N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 40A, 500V, R = 0.11Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 155 nC) planar stripe, DMOS technology. • Low Crss ( typical 95 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, motor drive and welding machine. D ! ! "" !!"" "" G! ! "" TO-264 ! ! S G FQL Series D S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQL40N50 Units V Drain-Source Voltage 500 V DSS I - Continuous (T = 25°C) Drain Current 40 A D C - Continuous (T = 100°C) 25 A C I (Note 1) Drain Current - Pulsed 160 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 1780 mJ AS I Avalanche Current (Note 1) 40 A AR E (Note 1) Repetitive Avalanche Energy 46 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 460 W D C - Derate above 25°C 3.7 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.27 °C/W θJC R Thermal Resistance, Case-to-Sink 0.1 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 30 °C/W θJA ©2001 Rev. A1. May 2001
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