FQH8N100C ,N-Channel QFET?MOSFET 1000V, 8.0A, 1.45?FQH8N100C 1000V N-Channel MOSFETMarch 2008® QFETFQH8N100C1000V N-Channel MOSFET
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FQI17N08TU ,80V N-Channel QFETapplications such as automotive,high efficiency switching for DC/DC converters, and DCmotor contro ..
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FQI20N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
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FQH8N100C
N-Channel QFET?MOSFET 1000V, 8.0A, 1.45?
FQH8N100C 1000V N-Channel MOSFET March 2008 ® QFET FQH8N100C 1000V N-Channel MOSFET Features Description • 8A, 1000V, R = 1.45Ω @V = 10 V These N-Channel enhancement mode power field effect DS(on) GS transistors are produced using Fairchild’s proprietary, planar • Low gate charge (typical 53nC) stripe, DMOS technology. • Low C (typical 16pF) rss This advanced technology has been especially tailored to •Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the avalanche • Improved dv/dt capability and commutation mode. These devices are well suited for high • RoHS compliant efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D G TO-247 G FQH Series D S S Absolute Maximum Ratings Symbol Parameter FQH8N100C Units V Drain-Source Voltage 1000 V DSS I Drain Current - Continuous (T = 25°C) 8.0 A D C - Continuous (T = 100°C) 5.0 A C (Note 1) I Drain Current - Pulsed 32 A DM V Gate-Source Voltage ± 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 850 mJ AS (Note 1) I Avalanche Current 8.0 A AR (Note 1) E Repetitive Avalanche Energy 22 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.0 V/ns P Power Dissipation (T = 25°C) 225 W D C - Derate above 25°C 1.79 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.56 °C/W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2008 1 FQH8N100C Rev. A
