FQD6P25TF ,250V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -4.7A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQD6P25TF ,250V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -4.7A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQD6P25TM ,250V P-Channel QFETApril 2000TMQFET QFET QFET QFETFQD6P25 / FQU6P25250V P-Channel MOSFET
FQD7N10L ,100V LOGIC N-Channel MOSFETapplications such as highdirect operation from logic drivesefficiency switching DC/DC converters, a ..
FQD7N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 5.5A, 200V, R = 0.75Ω @V = 10 VDS(on) ..
FQD7P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -5.4A, -60V, R = 0.45Ω @V = -10 VDS(o ..
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G751-2P1 ,mode Technology Inc - Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
G760A , Fan Speed PWM Controller
G767F ,mode Technology Inc - Remote/Local Temperature Sensor with SMBus Serial Interface
G8P-1A4TP , Compact, Low-cost 30-A Power Relay for PC Board or Panel-mounted Applications
G9015 , PNP EPITAXIAL PLANAR TRANSISTOR
FQD6P25TF-FQD6P25TM
250V P-Channel QFET
April 2000 TM QFET QFET QFET QFET FQD6P25 / FQU6P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -4.7A, -250V, R = 1.1Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. S D !!!!!!!! �������� G!!!! �������� !!!! �������� ���� ���� I-PAK D-PAK G S �������� G FQD Series D FQU Series S !!!!!!!! D Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQD6P25 / FQU6P25 Units V Drain-Source Voltage -250 V DSS I - Continuous (T = 25°C) Drain Current -4.7 A D C - Continuous (T = 100°C) -3.0 A C I (Note 1) Drain Current - Pulsed -18.8 A DM V Gate-Source Voltage ±�30 V GSS E (Note 2) Single Pulsed Avalanche Energy 540 mJ AS I Avalanche Current (Note 1) -4.7 A AR E (Note 1) Repetitive Avalanche Energy 5.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 55 W C - Derate above 25°C 0.44 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8��from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.27 °C�W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C�W θJA R � Thermal Resistance, Junction-to-Ambient -- 110 °C W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQD6P25 / FQU6P25
