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FQD5N60CFSCN/a2500avai600V N-Channel Advance QFET C-Series
FQD5N60CTMFSCN/a50avai600V N-Channel Advance QFET C-Series
FQU5N60CTUFSCN/a4343avai600V N-Channel Advance QFET C-Series


FQU5N60CTU ,600V N-Channel Advance QFET C-SeriesFeaturesThese N-Channel enhancement mode power field effect  2.8A, 600V, R = 2.5Ω @V = 10 VDS(on) ..
FQU5P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQU5P20 ,200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effect
FQU7N10 ,100V N-Channel MOSFETapplications such as audioamplifiers, high efficiency switching DC/DC converters, andDC motor contr ..
FQU7N10L ,100V LOGIC N-Channel MOSFETapplications such as highdirect operation from logic drivesefficiency switching DC/DC converters, a ..
FQU7P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -5.4A, -60V, R = 0.45Ω @V = -10 VDS(o ..
G9965-25TGU ,mode Technology Inc - 1.5A Low Dropout Regulator with Enable
G9966 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
G9967 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
GA100NA60U ,600V UltraFast 10-30 kHz Single IGBT in a SOT-227 packageFeatures3TM• UltraFast : Optimized for minimum saturationV = 600V2 CES voltage and operating fre ..
GA100TS60SQ ,600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V• Generation 4 Standard Speed IGBT CESTechnologyI = 220A DC • QuietIR Antiparallel ..
GA100TS60U ,600V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V Generation 4 IGBT technology CES UltraFast: Optimized for high operating frequ ..


FQD5N60C-FQD5N60CTM-FQU5N60CTU
600V N-Channel Advance QFET C-Series
FQD5N60C / FQU5N60C TM QFET FQD5N60C / FQU5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect  2.8A, 600V, R = 2.5Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary,  Low gate charge ( typical 15 nC) planar stripe, DMOS technology.  Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to  Fast switching minimize on-state resistance, provide superior switching  100% avalanche tested performance, and withstand high energy pulse in the  Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D !!!!!!!! D ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● D-PAK I-PAK GS FQD Series FQU Series GS D !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD5N60C / FQU5N60C Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 2.8 A D C - Continuous (T = 100°C) 1.8 A C I (Note 1) Drain Current - Pulsed 11.2 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 210 mJ AS I Avalanche Current (Note 1) 2.8 A AR E Repetitive Avalanche Energy (Note 1) 4.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Power Dissipation (T = 25°C)* 2.5 W A P Power Dissipation (T = 25°C) 49 W D C - Derate above 25°C 0.39 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case - 2.56 °C/W θJC R Thermal Resistance, Junction-to-Ambient* - 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient - 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2003 Rev. A, October 2003
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