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FQD5N50CFAIRCHILN/a12500avai500V N-Channel Advance QFET C-Series


FQD5N50C ,500V N-Channel Advance QFET C-SeriesFQD5N50C / FQU5N50C TMQFETFQD5N50C / FQU5N50C500V N-Channel MOSFET
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FQD5N50C
500V N-Channel Advance QFET C-Series
FQD5N50C / FQU5N50C TM QFET FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect  4.0A, 500V, R = 1.4 Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary,  Low gate charge ( typical 18nC) planar stripe, DMOS technology.  Low Crss ( typical 15pF) This advanced technology has been especially tailored to  Fast switching minimize on-state resistance, provide superior switching  100% avalanche tested performance, and withstand high energy pulse in the  Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● D-PAK I-PAK ● ● ● ● GS FQD Series FQU Series GS D !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD5N50C / FQU5N50C Units V Drain-Source Voltage 500 V DSS I - Continuous (T = 25°C) Drain Current 4A D C - Continuous (T = 100°C) 2.4 A C I (Note 1) Drain Current - Pulsed 16 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 300 mJ AS I Avalanche Current (Note 1) 4A AR E Repetitive Avalanche Energy (Note 1) 4.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Power Dissipation (T = 25°C)* 2.5 W A P Power Dissipation (T = 25°C) 48 W D C - Derate above 25°C 0.38 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case - 2.6 °C/W θJC R Thermal Resistance, Junction-to-Ambient * - 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient - 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2003 Rev. A, October 2003
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