FQD2N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 1.8A, 800V, R = 6.3Ω @V = 10 VDS(on) ..
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FQD2N80
800V N-Channel MOSFET
September 2000 TM QFET FQD2N80 / FQU2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.8A, 800V, R = 6.3Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D D ! ! "" 33 55 "" G! ! "" D-PAK I-PAK G S FQD Series G FQU Series D S ! ! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD2N80 / FQU2N80 Units V Drain-Source Voltage 800 V DSS I - Continuous (T = 25°C) Drain Current 1.8 A D C - Continuous (T = 100°C) 1.14 A C I (Note 1) Drain Current - Pulsed 7.2 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 180 mJ AS I Avalanche Current (Note 1) 1.8 A AR E Repetitive Avalanche Energy (Note 1) 5.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns Power Dissipation (T = 25°C) * P 2.5 W A D Power Dissipation (T = 25°C) 50 W C - Derate above 25°C 0.4 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.5 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A, September 2000 FQD2N80 / FQU2N80
