FQU2N100 ,1000V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 1.6A, 1000V, R = 9Ω @V = 10 VDS(on) G ..
FQU2N40 ,400V N-Channel MOSFET
FQU2N60 ,600V N-Channel MOSFET
FQU2N60 ,600V N-Channel MOSFET
FQU2N60 ,600V N-Channel MOSFET
FQU2N60C ,600V N-Channel MOSFETFQD2N60C / FQU2N60CTMQFETFQD2N60C / FQU2N60C600V N-Channel MOSFET
G9965-25TGU ,mode Technology Inc - 1.5A Low Dropout Regulator with Enable
G9966 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
G9967 ,mode Technology Inc - 3A Low Dropout Regulator with Enable
GA100NA60U ,600V UltraFast 10-30 kHz Single IGBT in a SOT-227 packageFeatures3TM• UltraFast : Optimized for minimum saturationV = 600V2 CES voltage and operating fre ..
GA100TS60SQ ,600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V• Generation 4 Standard Speed IGBT CESTechnologyI = 220A DC • QuietIR Antiparallel ..
GA100TS60U ,600V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak packageFeaturesV = 600V Generation 4 IGBT technology CES UltraFast: Optimized for high operating frequ ..
FQD2N100TM-FQU2N100
1000V N-Channel QFET
FQD2N100/FQU2N100 February 2002 FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.6A, 1000V, R = 9Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for electronic lamp starter and ballast. D D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! I-PAK D-PAK ● ● ● ● ● ● ● ● GS FQD Series FQU Series GS D !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD2N100/FQU2N100 Units V Drain-Source Voltage 1000 V DSS I - Continuous (T = 25°C) Drain Current 1.6 A D C - Continuous (T = 100°C) 1.0 A C I (Note 1) Drain Current - Pulsed 6.4 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 160 mJ AS I Avalanche Current (Note 1) 1.6 A AR E (Note 1) Repetitive Avalanche Energy 5.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 50 W C - Derate above 25°C 0.4 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.5 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2002 Rev. A, February 2002
