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FQD18N20V2FAIRCHILN/a25200avai200V N-Channel MOSFET


FQD18N20V2 ,200V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
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FQD18N20V2
200V N-Channel MOSFET
FQD18N20V2 / FQU18N20V2 TM QFET FQD18N20V2 / FQU18N20V2 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 15A, 200V, R = 0.14Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D ! ! D "" !!"" "" G! ! "" I-PAK D-PAK GS FQD Series FQU Series GS D ! ! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQD18N20V2 / FQU18N20V2 Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 15 A D C - Continuous (T = 100°C) 9.75 A C I (Note 1) Drain Current - Pulsed 60 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 340 mJ AS I Avalanche Current (Note 1) 15 A AR E Repetitive Avalanche Energy (Note 1) 8.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns Power Dissipation (T = 25°C) * P 2.5 W A D Power Dissipation (T = 25°C) 83 W C - Derate above 25°C 0.67 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.5 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2002 Rev. B1, August 2002
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