FQB70N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQB7N10 ,100V N-Channel MOSFETapplications such as audioamplifiers, high efficiency switching DC/DC converters, andDC motor contr ..
FQB7N10L ,100V LOGIC N-Channel MOSFETapplications such as high Low level gate drive requirments allowingefficiency switching DC/DC conv ..
FQB7N10LTM ,100V N-Channel Logic Level QFETFQB7N10L / FQI7N10LDecember 2000TMQFET QFET QFET QFETFQB7N10L / FQI7N10L100V LOGIC N-Channel MOSFET
FQB7N10LTM ,100V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, R = 0.35Ω @V = 10 VDS(on) ..
FQB7N10TM ,100V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, R = 0.35Ω @V = 10 VDS(on) ..
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FQB70N10
100V N-Channel MOSFET
August 2000 TM QFET QFET QFET QFET FQB70N10 / FQI70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 57A, 100V, R = 0.023Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 150 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well 175°C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D D ! ! "" !!"" "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB70N10 / FQI70N10 Units V Drain-Source Voltage 100 V DSS I - Continuous (T = 25°C) Drain Current 57 A D C - Continuous (T = 100°C) 40.3 A C I (Note 1) Drain Current - Pulsed 228 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 1300 mJ AS I Avalanche Current (Note 1) 57 A AR E (Note 1) Repetitive Avalanche Energy 16 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns Power Dissipation (T = 25°C) * 3.75 W P A D Power Dissipation (T = 25°C) 160 W C - Derate above 25°C 1.06 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.94 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. B, August 2000 FQB70N10 / FQI70N10
