FQB4N90TM ,900V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 4.2A, 900V, R = 3.3 Ω @ V = 10 VDS(on ..
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FQB4N90TM
900V N-Channel QFET
FQB4N90 / FQI4N90 October 2001 TM QFET FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.2A, 900V, R = 3.3 Ω @ V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typically 24 nC) planar stripe, DMOS technology. • Low Crss ( typically 9.5 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. D D ! ! "" !!"" "" G! ! "" 2 2 GS D -PAK I -PAK GS D ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB4N90 / FQI4N90 Units V Drain-Source Voltage 900 V DSS I - Continuous (T = 25°C) Drain Current 4.2 A D C - Continuous (T = 100°C) 2.65 A C I (Note 1) Drain Current - Pulsed 16.8 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 570 mJ AS I Avalanche Current (Note 1) 4.2 A AR E (Note 1) Repetitive Avalanche Energy 14 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V Power Dissipation (T = 25°C) * 3.13 W P A D Power Dissipation (T = 25°C) 140 W C - Derate above 25°C 1.12 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.89 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. B, October 2001
