FQB4N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, R = 1.35Ω @V = 10 VDS(on) ..
FQB4N20LTM ,200V N-Channel Logic Level QFETFQB4N20L / FQI4N20LDecember 2000TMQFET QFET QFET QFETFQB4N20L / FQI4N20L200V LOGIC N-Channel MOSFET
FQB4N20LTM ,200V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, R = 1.35Ω @V = 10 VDS(on) ..
FQB4N20TM ,200V N-Channel QFET
FQB4N20TM ,200V N-Channel QFET
FQB4N25 ,250V N-Channel MOSFET
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FQB4N20L
200V LOGIC N-Channel MOSFET
FQB4N20L / FQI4N20L December 2000 TM QFET QFET QFET QFET FQB4N20L / FQI4N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, R = 1.35Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are Low level gate drive requirement allowing direct well suited for high efficiency switching DC/DC converters, operation from logic drivers switch mode power supplies, and motor control. D D ! ! "" !!"" "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB4N20L / FQI4N20L Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 3.8 A D C - Continuous (T = 100°C) 2.4 A C I (Note 1) Drain Current - Pulsed 15.2 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 52 mJ AS I Avalanche Current (Note 1) 3.8 A AR E (Note 1) Repetitive Avalanche Energy 4.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 3.13 W P A D Power Dissipation (T = 25°C) 45 W C - Derate above 25°C 0.36 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.78 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A2, December 2000
