FQB28N15 ,150V N-Channel MOSFETapplications such as audioamplifiers, high efficiency switching for DC/DC converters,DC motor contr ..
FQB2N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
FQB2N60TM ,600V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
FQB2N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 800V, R = 6.3Ω @V = 10 VDS(on) ..
FQB2N80TM ,800V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 2.4A, 800V, R = 6.3Ω @V = 10 VDS(on) ..
FQB2N90 ,900V N-Channel MOSFET
G6A-274P-ST-US , Fullly Sealed Relay with High Impulse Withstand
G6AK-274P-STLT-US-DC5 , Fullly Sealed Relay with High Impulse Withstand
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
FQB28N15
150V N-Channel MOSFET
FQB28N15 / FQI28N15 December 2000 TM QFET QFET QFET QFET FQB28N15 / FQI28N15 150V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 28A, 150V, R = 0.09Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are 175°C maximum junction temperature rating well suited for low voltage applications such as audio amplifiers, high efficiency switching for DC/DC converters, DC motor control, and uninterrupted power supplies. D D ! ! "" !!"" "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB28N15 / FQI28N15 Units V Drain-Source Voltage 150 V DSS I - Continuous (T = 25°C) Drain Current 28 A D C - Continuous (T = 100°C) 19.8 A C I (Note 1) Drain Current - Pulsed 112 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 300 mJ AS I Avalanche Current (Note 1) 28 A AR E (Note 1) Repetitive Avalanche Energy 16.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 3.75 W P A D Power Dissipation (T = 25°C) 168 W C - Derate above 25°C 1.12 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.89 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A2, December 2000
