FQB20N06TM ,60V N-Channel QFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQB22P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQB22P10 ,100V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -22A, -100V, R = 0.125Ω @V = -10 VDS( ..
FQB22P10TM ,100V P-Channel QFETFQB22P10 / FQI22P10TMQFETFQB22P10 / FQI22P10100V P-Channel MOSFET
FQB22P10TM ,100V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect • -22A, -100V, R = 0.125Ω @V = -10 VDS( ..
FQB24N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
G6A-274P-ST-US , Fullly Sealed Relay with High Impulse Withstand
G6AK-274P-STLT-US-DC5 , Fullly Sealed Relay with High Impulse Withstand
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
FQB20N06TM
60V N-Channel QFET
FQB20N06 / FQI20N06 May 2001 TM QFET FQB20N06 / FQI20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 20A, 60V, R = 0.06Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • 175°C maximum junction temperature rating suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. D D ! ! "" !!"" "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB20N06 / FQI20N06 Units V Drain-Source Voltage 60 V DSS I - Continuous (T = 25°C) Drain Current 20 A D C - Continuous (T = 100°C) 14.1 A C I (Note 1) Drain Current - Pulsed 80 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 155 mJ AS I Avalanche Current (Note 1) 20 A AR E (Note 1) Repetitive Avalanche Energy 5.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns Power Dissipation (T = 25°C) * 3.75 W P A D Power Dissipation (T = 25°C) 53 W C - Derate above 25°C 0.35 W/°C T , T Operating and Storage Temperature Range -55 to +175 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.85 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. A1. May 2001
