IC Phoenix
 
Home ›  FF18 > FQB11P06,60V P-Channel MOSFET
FQB11P06 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
FQB11P06FAIRCHILN/a4800avai60V P-Channel MOSFET


FQB11P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -11.4A, -60V, R = 0.175Ω @V = -10 VDS ..
FQB11P06TM ,60V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect • -11.4A, -60V, R = 0.175Ω @V = -10 VDS ..
FQB12N20 ,200V N-Channel MOSFET
FQB12N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect  11.6A, 200V, R = 0.28Ω @V = 10 VDS(on ..
FQB12N50 ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 12.1A, 500V, R = 0.49Ω @V = 10 VDS(on ..
FQB12N60C ,600V N-Channel Advance QFET C-SeriesFeaturesThese N-Channel enhancement mode power field effect  12A, 600V, R = 0.65Ω @V = 10 VDS(on) ..
G690L438T71 ,mode Technology Inc - Microprocessor Reset IC
G690L438T72 ,mode Technology Inc - Microprocessor Reset IC
G691L263T71 ,mode Technology Inc - Microprocessor Reset IC
G691L293T73 ,mode Technology Inc - Microprocessor Reset IC
G691L308T72 ,mode Technology Inc - Microprocessor Reset IC
G691L308T73 ,mode Technology Inc - Microprocessor Reset IC


FQB11P06
60V P-Channel MOSFET
FQB11P06 / FQI11P06 May 2001 TM QFET FQB11P06 / FQI11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -11.4A, -60V, R = 0.175Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand a high energy pulse in the • Improved dv/dt capability avalanche and commutation modes. These devices are • 175°C maximum junction temperature rating well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. S D !!!!!!!! ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G S 2 2 D -PAK I -PAK G D S !!!! !!!! FQB Series FQI Series D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB11P06 / FQI11P06 Units V Drain-Source Voltage -60 V DSS I - Continuous (T = 25°C) Drain Current -11.4 A D C - Continuous (T = 100°C) -8.05 A C I (Note 1) Drain Current - Pulsed -45.6 A DM V Gate-Source Voltage ± 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 160 mJ AS I Avalanche Current (Note 1) -11.4 A AR E (Note 1) Repetitive Avalanche Energy 5.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns Power Dissipation (T = 25°C) * 3.13 W P A D Power Dissipation (T = 25°C) 53 W C - Derate above 25°C 0.35 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.85 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. A4. May 2001
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED