FQA7N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 7.7A, 600V, R = 1.0Ω @V = 10 VDS(on) ..
FQA7N80C ,800V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 7.0A, 800V, R = 1.9Ω @V = 10 VDS(on) ..
FQA7N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 7.4A, 900V, R = 1.55Ω @V = 10 VDS(on) ..
FQA7N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 7.4A, 900V, R = 1.55Ω @V = 10 VDS(on) ..
FQA7N90 ,900V N-Channel MOSFETFQA7N90March 2001TMQFETFQA7N90900V N-Channel MOSFET
FQA7N90M ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 7A, 900V, R = 1.8Ω @V = 10 VDS(on) GS ..
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G691L263T71 ,mode Technology Inc - Microprocessor Reset IC
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FQA7N60
600V N-Channel MOSFET
April 2000 TM QFET QFET QFET QFET FQA7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.7A, 600V, R = 1.0Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. D ! ! "" !!"" "" G! ! "" ! ! TO-3P S G D S FQA Series Absolute Maximum Ratings �� T = 25°C unless otherwise noted C Symbol Parameter FQA7N60 Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25°C) Drain Current 7.7 A D C - Continuous (T = 100°C) 4.8 A C I (Note 1) Drain Current - Pulsed 30.8 A DM V Gate-Source Voltage ±�30 V GSS E (Note 2) Single Pulsed Avalanche Energy 580 mJ AS I Avalanche Current (Note 1) 7.7 A AR E (Note 1) Repetitive Avalanche Energy 15.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 152 W D C - Derate above 25°C 1.22 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8� from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.82 °C�W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C�W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C�W θJA ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQA7N60
