FQA19N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 21.8A, 200V, R = 0.17Ω @V = 10 VDS(on ..
FQA19N20L ,200V LOGIC N-Channel MOSFET
FQA19N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 18.5A, 600V, R = 0.38 Ω @ V = 10 VDS( ..
FQA22N30 ,300V N-Channel MOSFET
FQA22P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQA24N50F ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 24A, 500V, R = 0.2Ω @V = 10 VDS(on) G ..
G690H263T73 ,mode Technology Inc - Microprocessor Reset IC
G690L263T71 ,mode Technology Inc - Microprocessor Reset IC
G690L438T71 ,mode Technology Inc - Microprocessor Reset IC
G690L438T72 ,mode Technology Inc - Microprocessor Reset IC
G691L263T71 ,mode Technology Inc - Microprocessor Reset IC
G691L293T73 ,mode Technology Inc - Microprocessor Reset IC
FQA19N20C
200V N-Channel Advance Q-FET C-Series
FQA19N20C ® QFET FQA19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 21.8A, 200V, R = 0.17Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 85 pF) This advanced technology has been especially tailored to •Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D {{ ●● ◀◀ ▲▲ ●● G{{ ●● TO-3P {{ FQA Series GS D S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQA19N20C Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 21.8 A D C - Continuous (T = 100°C) 13.8 A C I (Note 1) Drain Current - Pulsed 87.2 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 433 mJ AS I Avalanche Current (Note 1) 21.8 A AR E (Note 1) Repetitive Avalanche Energy 18.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 180 W D C - Derate above 25°C 1.45 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.69 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.24 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2004 Rev. A, March 2004
