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FQA13N50CF
N-Channel QFET?FRFET?MOSFET 500V, 15A, 480m?
® ® FQA13N50CF N-Channel QFET FRFET MOSFET April 2013 FQA13N50CF ® ® N-Channel QFET FRFET MOSFET 500 V, 15 A, 48 mΩ Features Description • 15 A, 500 V, R = 48 mΩ (Max.) @ V = 10 V, This N-Channel enhancement mode power MOSFET is DS(on) GS ® I = 7.5 A produced using Fairchild Semiconductor ’s proprietary planar D stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 43 nC) technology has been especially tailored to reduce on-state • Low C (Typ. 20 pF) rss resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for • 100% Avalanche Tested switched mode power supplies, active power factor correction • Fast Recovery Body Diode (Typ. 100 ns) (PFC), and electronic lamp ballasts. D G G D TO-3PN S S Absolute Maximum Ratings Symbol Parameter FQA13N50CF Unit V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25°C) 15 A D C - Continuous (T = 100°C) 9.5 A C (Note 1) I Drain Current - Pulsed 60 A DM V Gate-Source Voltage ± 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 860 mJ AS (Note 1) I Avalanche Current 15 A AR (Note 1) E Repetitive Avalanche Energy 21.8 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25°C) 218 W D C - Derate above 25°C 1.56 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8''"from case for 5 seconds Thermal Characteristics FQA13N50CF Symbol Parameter Unit 0.58 R Thermal Resistance, Junction-to-Case, Max. °C/W θJC R Thermal Resistance, Case-to-Sink, Typ. 0.24 °C/W θJS 40 R Thermal Resistance, Junction-to-Ambient, Max. °C/W θJA 1 ©2007 FQA13N50CF Rev. C0
