| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| FP1189 |
WJ |
N/a |
3000 |
 |
High Performance ½-Watt HFET(Heterostructure FET) |
FP1189 , High Performance ½-Watt HFET(Heterostructure FET)
FP11-89 , High Performance ½-Watt HFET(Heterostructure FET)
FP1308R1-R32-R , High Current, High Frequency, Power Inductors
FP15R12KT3 , IGBT-Wechselrichter / IGBT-inverter
FP15R12W1T4 , EasyPIM™ module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
G491SD , SURFACE MOUNT, SCHOTTKY BARRIER DIODE VOLTAGE 25V, CURRENT 1A
G4A ,Standard Sinterglass DiodeRev. 2, 28-Jan-03 1G4A to G4JVISHAYVishay SemiconductorsParameter Test condition Part Symbol Value ..
G4D ,GLASS PASSIVATED JUNCTION RECTIFIERElectrical CharacteristicsT = 25 °C, unless otherwise specified ambParameter Test condition Symbol ..
