Partno |
Mfg |
Dc |
Qty |
Available | Descript |
FP10R12YT3 |
EUPEC |
N/a |
6 |
|
IGBT-modules |
FP10R12YT3 |
INFINEON|Infineon |
N/a |
74 |
|
IGBT-modules |
FP10R12YT3_B4 EUPEC, IGBT-modules
FP-11 PHILPS, Sealed Ultra Miniature Pushbutton Switches
FP10R12YT3 , IGBT-modules
FP1107R1-R23-R , High Current, High Frequency, Power Inductors
FP1189 , High Performance ½-Watt HFET(Heterostructure FET)
FP11-89 , High Performance ½-Watt HFET(Heterostructure FET)
FP1308R1-R32-R , High Current, High Frequency, Power Inductors
G491SD , SURFACE MOUNT, SCHOTTKY BARRIER DIODE VOLTAGE 25V, CURRENT 1A
G4A ,Standard Sinterglass DiodeRev. 2, 28-Jan-03 1G4A to G4JVISHAYVishay SemiconductorsParameter Test condition Part Symbol Value ..
G4D ,GLASS PASSIVATED JUNCTION RECTIFIERElectrical CharacteristicsT = 25 °C, unless otherwise specified ambParameter Test condition Symbol ..