FP107 ,TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating Uni[TR]CV ollector-to ..
FP10R12W1T4 , EasyPIM™ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC
FP10R12YT3 , IGBT-modules
FP1107R1-R23-R , High Current, High Frequency, Power Inductors
FP1189 , High Performance ½-Watt HFET(Heterostructure FET)
FP11-89 , High Performance ½-Watt HFET(Heterostructure FET)
G491SD , SURFACE MOUNT, SCHOTTKY BARRIER DIODE VOLTAGE 25V, CURRENT 1A
G4A ,Standard Sinterglass DiodeRev. 2, 28-Jan-03 1G4A to G4JVISHAYVishay SemiconductorsParameter Test condition Part Symbol Value ..
G4D ,GLASS PASSIVATED JUNCTION RECTIFIERElectrical CharacteristicsT = 25 °C, unless otherwise specified ambParameter Test condition Symbol ..
G4G ,GLASS PASSIVATED JUNCTION RECTIFIERFeatures • High temperature metallurgically bonded con-structed rectifiers Cavity-free glass pass ..
G4J ,GLASS PASSIVATED JUNCTION RECTIFIER Document Number 860872 Rev. 2, 28-Jan-03Average Forward Rectified Current (A)Peak Forward Surge Cu ..
G4P109 , 1000 BASE -T QUAD PORT MAGNETICS MODULES
FP107
