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FMBM5401
NPN General Purpose Amplifier
FMBM5401 PNP General Purpose Amplifier FMBM5401 PNP General Purpose Amplifier • This device has matched dies in SuperSOT-6. C2 E1 C1 B2 E2 B1 pin #1 TM SuperSOT -6 Mark: .4S2 Absolute Maximum Ratings* Symbol Parameter Value Units V Collector-Emitter Voltage -150 V CEO V Collector-Base Voltage -160 V CBO Emitter-Base Voltage -5.0 V V EBO I Collector Current - Continuous -600 mA C T , T Operating and Storage Junction Temperature Range -55 ~ 150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may e impaired. Notes: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T = 25°C unless otherwise noted C Symbol Parameter Conditions Min. Max Units Off Characteristics BV Collector-Emitter Breakdown Voltage * I = -1.0mA, I = 0 -150 V CEO C B BV Collector-Base Breakdown Voltage I = -100μA, I = 0 -160 V CBO C E Emitter-Base Breakdown Voltage I = -10μA, I = 0 -5.0 V BV EBO C C I Collector Cut-off Current V = -120V, I = 0 -50 nA CBO CB E = -120V, I = 0, T = 100°C -50 μA V CB E a I Emitter Cut-off Current V = -3.0V, I = 0 -50 nA EBO EB C On Characteristics* h DC Current Gain V = -5V, I = -1mA 50 FE1 CE C DIVID1 Variation Ratio of h Between Die 1 and Die 2 h (Die1)/h (Die2) 0.9 1.1 FE1 FE1 FE1 h DC Current Gain V = -5V, I = -10mA 60 240 FE2 CE C Between Die 1 and Die 2 h (Die1)/h (Die2) 0.95 1.05 DIVID2 Variation Ratio of h FE2 FE2 FE2 h DC Current Gain V = -5V, I = -50mA 50 FE3 CE C DIVID3 Variation Ratio of h Between Die 1 and Die 2 h (Die1)/h (Die2) 0.9 1.1 FE3 FE3 FE3 ©2005 1 FMBM5401 Rev. A
