FMBA56 ,PNP Multi-Chip General Purpose Amplifierapplications at collectorcurrents to 300 mA. Sourced from Process 73.Absolute Maximum Ratings* ..
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FMBA56
PNP Multi-Chip General Purpose Amplifier
FMBA56 FMBA56 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT-6 Mark: .2G Dot denotes pin #1 PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Collector-Emitter Voltage 80 V CES V Collector-Base Voltage 80 V CBO V Emitter-Base Voltage 4.0 V EBO 4 I Collector Current - Continuous 500 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics T = 25°C unless otherwise noted A Symbol Characteristic Max Units FMBA56 PD Total Device Dissipation 700 mW Derate above 25 C 5.6 mW/ C ° ° Thermal Resistance, Junction to Ambient 180 R °C/W θJA 1998
