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FMB5551
NPN General Purpose Amplifier
FMB5551 FMB5551 C2 NPN General Purpose Amplifier E1 SuperSOT-6 Surface Mount Package C1 • This device is designed for general purpose high voltage amplifiers and gas discharge display driving. • Sourced from process 16. B2 • See MMBT5551 for characteristics. E2 B1 SuperSOT-6 Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 160 V CEO V Collector-Base Voltage 180 V CBO V Emitter-Base Voltage 6 V EBO I Collector Current (DC) 600 mA C P Collector Dissipation (T =25°C) * 0.7 W C a T Junction Temperature 150 °C J T Storage Temperature Range - 55 ~ 150 °C STG R Thermal Resistance, Junction to Ambient 180 °C/W θJA * Pd total, for both transistors. For each transistor, Pd = 350mW. Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BV Collector-Emitter Voltage I = 1mA 160 V CEO C BV Collector-Base Voltage I = 10μA180 V CBO C BV Emitter-Base Voltage I = 10μA6 V EBO E I Collector Cut-off Current V = 120V 50 nA CBO CB V = 120V, T = 100°C 50 μA CB I Emitter Cut-off Current V = 4V 50 nA EBO EB On Characteristics h DC Current Gain V = 5V, I = 1mA 80 FE CE C V = 5V, I = 10mA 80 250 CE C V = 5V, I = 50mA 30 CE C V (sat) Collector-Emitter Saturation Voltage I = 10mA, I = 1mA 0.15 V CE C B I = 50mA, I = 5mA 0.2 C B V (sat) Base-Emitter Saturation Voltage I = 10mA, I = 1mA 1 V BE C B I = 50mA, I = 5mA 1 C B Small Signal Characteristics TYPICAL C Output Capacitance V = 10V, f = 1MHz 6 pF ob CB C Input Capacitance V = 0.5V, f = 1MHz 20 pF ib CB f Current gain Bandwidth Product V = 10V, I = 10mA 100 300 MHz T CE C f = 100MHz NF Noise Figure V = 5V, I = 200μA 8dB CE C f = 1MHz, R = 2kΩ, B = 200Hz S h Small Signal Current Gain V = 10V, I = 1mA 50 250 FE CE C f = 1KHz ©2002 Rev. A, January 2002
