FMB2222A ,NPN Multi-Chip General Purpose AmplifierFFB2222A / FMB2222A / MMPQ2222AFMB2222AFFB2222A MMPQ2222AB4E2C2E4B2 B3E1E3C1 B2C1E2B1E1C4C4C2B2C3SC ..
FMB2222A ,NPN Multi-Chip General Purpose AmplifierFFB2222A / FMB2222A / MMPQ2222AFMB2222AFFB2222A MMPQ2222AB4E2C2E4B2 B3E1E3C1 B2C1E2B1E1C4C4C2B2C3SC ..
FMB2222A ,NPN Multi-Chip General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics T = 25°C un ..
FMB2227A ,NPN & PNP General Purpose AmplifierFFB2227A / FMB2227AFFB2227A FMB2227AE2C2B2TRANSISTOR TYPEE1C1C1 B1 E1 NPNC1C2 B2 E ..
FMB-22H , Schottky Barrier Diodes 20V
FMB-2306 , 30A Schottky barrier diode in TO220F package
FX802 ,DVSR CodecAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating Uni[TR]CV ollector-to ..
FX803 ,DC-DC ConverterAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating Uni[TR]CV ollector-to ..
FX828D5 , CTCSS/DCS/SELCALL Processor
FX829D5 , Baseband Signal Processor
FX8-80P-SV , 0.6mm Pitch Stacking Height 3mm to 16mm Connector
FX8-80S-SV , 0.6mm Pitch Stacking Height 3mm to 16mm Connector
FMB2222A
NPN Multi-Chip General Purpose Amplifier
FFB2222A / FMB2222A / MMPQ2222A FMB2222A FFB2222A MMPQ2222A B4 E2 C2 E4 B2 B3 E1 E3 C1 B2 C1 E2 B1 E1 C4 C4 C2 B2 C3 SC70-6 B1 E2 C3 Mark: .1P pin #1 E1 C2 B1 pin #1 C2 SOIC-16 C1 NOTE: The pinouts are symmetrical; pin 1 and pin Mark: C1 pin #1 SuperSOT-6 4 are interchangeable. Units inside the carrier can MMPQ2222A Mark: .1P be of either orientation and will not affect the functionality of the device. Dot denotes pin #1 NPN Multi-Chip General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO VCBO Collector-Base Voltage 75 V V Emitter-Base Voltage 5.0 V EBO 4 I Collector Current - Continuous 500 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T ° J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T = 25°C unless otherwise noted A Symbol Characteristic Max Units FFB2222A FMB2222A MMPQ2222A P Total Device Dissipation 300 700 1,000 mW D 2.4 5.6 8.0 Derate above 25°C mW/°C R Thermal Resistance, Junction to Ambient 415 180 °C/W θJA Effective 4 Die 125 °C/W Each Die 240 °C/W 1998
