Partno |
Mfg |
Dc |
Qty |
Available | Descript |
FLL120MK |
FUJITSU|Fujitsu Microelectronics |
N/a |
21 |
|
L-Band Medium & High Power GaAs FET |
FLL120MK |
FUJI |
N/a |
1 |
|
L-Band Medium & High Power GaAs FET |
FLL177ME ,L-BAND MEDIUM & HIGH POWER GAAS FETFEATURES
. High Output Power: P1dB=32.5dBm (Typ.)
. High Gain: G1dB=12.5dB (Typ.)
. High PAE ..
FLL177ME ,L-BAND MEDIUM & HIGH POWER GAAS FETapplications. This device is assembled in hermetic
metal/ceramic package.
Fujitsu's stringent ..
FLL351ME ,L-band medium & high power gaas FTEsapplications. This device is assembled in hermetic
metal/ceramic package.
Fujitsu's stringent Q ..
FLL400IP-2 , L-Band Medium & High Power GaAs FET
FLL400IP-3 , L-Band Medium & High Power GaAs FET
FTLF8524P2BNV , 4.25 Gb/s RoHS Compliant Short-Wavelength SFP Transceiver
FTLX1612M3BCL , RoHS-6 Compliant 40km Multi-Rate XFP Optical Transceiver
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