| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| FLJ551 |
SIEMENS |
N/a |
89 |
 |
|
FLL107ME ,L-BAND MEDIUM & HIGH POWER GAAS FETFEATURES
. High Output Power: P1dB=29.5dBm (Typ.)
. High Gain: G1dB=13.5dB (Typ.)
. High PAE ..
FLL120MK , L-Band Medium & High Power GaAs FET
FLL177ME ,L-BAND MEDIUM & HIGH POWER GAAS FETFEATURES
. High Output Power: P1dB=32.5dBm (Typ.)
. High Gain: G1dB=12.5dB (Typ.)
. High PAE ..
FLL177ME ,L-BAND MEDIUM & HIGH POWER GAAS FETapplications. This device is assembled in hermetic
metal/ceramic package.
Fujitsu's stringent ..
FLL351ME ,L-band medium & high power gaas FTEsapplications. This device is assembled in hermetic
metal/ceramic package.
Fujitsu's stringent Q ..
FTD2022 ,N-Channel Silicon MOSFET Load Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
FTD7003 ,Pch+PchAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
FTLF1323P1BTR , OC-3 IR-1/STM S-1.1 RoHS Compliant Pluggable SFP Transceiver
