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FKPF3N80FSCN/a40avaiBi-Directional Triode Thyristor Planar Silicon
FKPF3N80TUFAIRCHILDN/a551avaiBi-Directional Triode Thyristor Planar Silicon


FKPF3N80TU ,Bi-Directional Triode Thyristor Planar SiliconFKPF3N80FKPF3N80Application Explanation• Switching mode power supply, light dimmer, electric flashe ..
FKPF5N80 ,Bi-Directional Triode Thyristor Planar SiliconFKPF5N80FKPF5N80Application Explanation• Switching mode power supply, light dimmer, electric flashe ..
FKPF5N80TU ,Bi-Directional Triode Thyristor Planar SiliconFKPF5N80FKPF5N80Application Explanation• Switching mode power supply, light dimmer, electric flashe ..
FKPF5N80TU ,Bi-Directional Triode Thyristor Planar SiliconFKPF5N80FKPF5N80Application Explanation• Switching mode power supply, light dimmer, electric flashe ..
FKV660 , MOSFET
FKV660S , MOSFET
FSU10B60 , FOR POWER FACTOR IMPROVEMENT HIGH FREQUENCY RECTIFICATION
FSU20B60 , FRD - For Power Factor Improvement High Frequency Rectification
FSU20B60 , FRD - For Power Factor Improvement High Frequency Rectification
FSUSB104UMX , Low-Power, Two-Port, Hi-Speed, USB2.0 (480Mbps) Switch
FSUSB11L10X ,Low Power High Bandwidth USB Switch Dual SPDT Multiplexer/Demultiplexerfeatures ultra low R of 1.3Ω maximumON

FKPF3N80-FKPF3N80TU
Bi-Directional Triode Thyristor Planar Silicon
FKPF3N80 FKPF3N80 Application Explanation • Switching mode power supply, light dimmer, electric flasher unit • TV sets, stereo, refrigerator, washing machine, bread maker • Electric blanket, solenoid driver, small motor control • Photo copier, electric tool 2 1: T 1 2: T 2 3: Gate 3 TO-220F 1 1 2 3 Bi-Directional Triode Thyristor Planar Silicon Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Rating Units (Note1 ) V Repetitive Peak Off-State Voltage 800 V DRM Symbol Parameter Conditions Rating Units I RMS On-State Current Commercial frequency, sine full wave 360° 3A T (RMS) conduction, T =110°C C I Surge On-State Current Sinewave 1 full cycle, peak value, 50Hz 30 A TSM non-repetitive 60Hz 33 A 2 2 2 I t I t for Fusing Value corresponding to 1 cycle of halfwave, 4.5 A s surge on-state current, tp=10ms di/dt Critical Rate of Rise of On-State Current I = 2x I , tr ≤ 100ns 50 A/μs G GT P Peak Gate Power Dissipation 5 W GM P Average Gate Power Dissipation 0.5 W G (AV) V Peak Gate Voltage 10 V GM I Peak Gate Current 2A GM T Junction Temperature - 40 ~ 125 °C J T Storage Temperature - 40 ~ 125 °C STG V Isolation Voltage Ta=25°C, AC 1 minute, T T G terminal to 1500 V iso 1 2 case Thermal Characteristic Symbol Parameter Test Condition Min. Typ. Max. Units (Note 4) R Thermal Resistance Junction to case -- 4.3 °C/W th(J-C) ©2004 Rev. A, April 2004
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