FJYF2906TF ,PNP Multi-Chip General Purpose AmplifierFJYF2906FJYF2906C1PNP Multi-Chip General Purpose AmplifierE1• Collector-Emitter Voltage: V = 40VCEO ..
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FJYF2906TF
PNP Multi-Chip General Purpose Amplifier
FJYF2906 FJYF2906 C1 PNP Multi-Chip General Purpose Amplifier E1 • Collector-Emitter Voltage: V = 40V CEO C2 • Amplifier and Switching Application • E2 is on pin 1 B1 B2 E2 (Pin1) SOT-563F Mark: S1 Absolute Maximum Ratings T =25°C unless otherwise noted A Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 5 V EBO I Collector Current - Continuous 150 mA C T , T Operating and Storage Junction Temperature Range -55 ~ +150 °C J STG Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BV Collector-Emitter Breakdown Voltage I = 1MA, I = 0 40 V CEO C B BV Collector-Base Breakdown Voltage I = 10µA, I = 0 40 V CBO C E BV Emitter-Base Breakdown Voltage I = 10µA, I = 0 5 V EBO E C I Collector Cut-off Current V = 30V, V = 3V 50 NA CEX CE BE On Characteristics h DC Current Gain * V = 1V, I = 0.1MA 60 FE CE C V = 1V, I = 1mA 80 CE C V = 1V, I = 10mA 100 300 CE C V = 1V, I = 50mA 60 CE C V = 1V, I = 100mA 30 CE C V (sat) Collector-Emitter Saturation Voltage I = 10mA, I = 1mA 0.3 V CE C B I = 50mA, I = 5mA 0.5 V C B V (sat) Base-Emitter Saturation Voltage I = 10mA, I = 1mA 0.65 0.95 V BE C B I = 50mA, I = 5mA 1 V C B Small Signal Characteristics f Current gain Bandwidth Product V = 20V, I = 10mA 250 MHz T CE C f = 100MHz C Output Capacitance V = 5V, I = 0, f = 1MHz 4.5 pF obo CB E C Input Capacitance V = 0.5V, I = 0, f = 1MHz 10 pF ibo EB C * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0% NOTE: All voltage (V) and currents (A) are negative for PNP transistors. ©2002 Rev. A1, September 2002
