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FJX945GTF-FJX945OTF-FJX945YTF Fast Delivery,Good Price
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FJX945GTFFAIRCHILDN/a3000avaiNPN Epitaxial Silicon Transistor
FJX945OTFFAIRCHILN/a39000avaiNPN Epitaxial Silicon Transistor
FJX945YTFFAIRCHILDN/a15000avaiNPN Epitaxial Silicon Transistor


FJX945OTF ,NPN Epitaxial Silicon TransistorFJX945FJX945Audio Frequency Amplifier3High Frequency OSC.• Collector-Base Voltage V =60VCBO• High C ..
FJX945YTF ,NPN Epitaxial Silicon TransistorFJX945FJX945Audio Frequency Amplifier3High Frequency OSC.• Collector-Base Voltage V =60VCBO• High C ..
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FJX945GTF-FJX945OTF-FJX945YTF
NPN Epitaxial Silicon Transistor
FJX945 FJX945 Audio Frequency Amplifier 3 High Frequency OSC. • Collector-Base Voltage V =60V CBO • High Current Gain Bandwidth Product f =300MHz (Typ) T 2 • Complement to FJX733 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 150 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 60 V CBO C E BV Collector-Emitter Breakdown Voltage I =10mA, I =0 50 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I =0 5 V EBO E C I Collector Cut-off Current V =40V, I =0 0.1 μA CBO CB E I Emitter Cut-off Current V =3V, I =0 0.1 μA EBO EB C h DC Current Gain V =6V, I =1.0mA 70 700 FE CE C V (sat) Collector-Emitter Saturation Voltage I =100mA, I =10mA 0.15 0.3 V CE C B f Current Gain Bandwidth Product V =6V, I =10mA 300 MHz T CE C C Output Capacitance V =6V, I =0 2.5 pF ob CB E f=1MHz NF Noise Figure V =6V, I = -0.5mA 4.0 dB CE E f=1KHz, R =500Ω S h Classification FE Classification O Y G L h 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700 FE Marking SAX Grade ©2004 Rev. B2, April 2004
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