FJX597JHTF ,Silicon N-Channel Junction FETFJX597JHFJX597JHCapacitor Microphone
FJX597J-HTF ,Silicon N-Channel Junction FETApplications3• Especially Suited for use in Audio, Telephone Capacitor Microphones• Excellent Volt ..
FJX597J-HTF ,Silicon N-Channel Junction FETApplications3• Especially Suited for use in Audio, Telephone Capacitor Microphones• Excellent Volt ..
FJX733OTF ,PNP Epitaxial Silicon TransistorFJX733FJX7333Low Frequency Amplifier• Collector-Base Voltage V = -60VCBO• Complement to FJX94521SOT ..
FJX733YTF ,PNP Epitaxial Silicon TransistorFJX733FJX7333Low Frequency Amplifier• Collector-Base Voltage V = -60VCBO• Complement to FJX94521SOT ..
FJX945GTF ,NPN Epitaxial Silicon TransistorFJX945FJX945Audio Frequency Amplifier3High Frequency OSC.• Collector-Base Voltage V =60VCBO• High C ..
FST34X2245QSP ,32-Bit Bus Switch with 25з Series Resistors in OutputsFST34X2245 32-Bit Bus Switch with 25 Series Resistors in OutputsDecember 2001Revised December 2001F ..
FST34X2245QSPX ,32-Bit Bus Switch with 25 Ohm Series Resistor in OutputsFST34X2245 32-Bit Bus Switch with 25 Series Resistors in OutputsDecember 2001Revised January 2005F ..
FST34X245 ,32-Bit Bus SwitchFeaturesThe Fairchild Switch FST34X245 provides 32-bits of high
FJX597JHTF-FJX597J-HTF
Silicon N-Channel Junction FET
FJX597JH FJX597JH Capacitor Microphone Applications 3 • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic 2 1 SOT-323 Marking: SCH 1. Drain 2. Source 3. Gate Si N-channel Junction FET Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Gate-Drain Voltage -20 V GDO I Gate Current 10 mA G I Drain Current 1 mA D P Power Dissipation 100 mW D T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Gate-Drain Breakdown Voltage I = -100uA -20 V GDO G V (off) Gate-Source Cut-off Voltage V =5V, I =1μA -0.6-1.5V GS DS D I Drain Current V =5V, V =0 150 350 μA DSS DS GS lY l Forward Transfer Admittance V =5V, V =0, f=1MHz 0.4 1.2 mS FS DS GS C Input Capacitance V =5V, V =0, f=1MHz 3.5 pF ISS DS GS C Output Capacitance V =5V, V =0, f=1MHz 0.65 pF RSS DS GS ©2002 Rev. D1, August 2002
