FJX3906TF ,PNP Epitaxial Silicon TransistorFJX3906FJX39063General Purpose Transistor21SOT-323PNP Epitaxial Silicon Transistor1. Base 2. Emit ..
FJX4001RTF ,PNP Epitaxial Silicon TransistorFJX4001RFJX4001R3Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Inter ..
FJX4002RTF ,PNP Epitaxial Silicon TransistorFJX4002RFJX4002RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX4003RTF ,PNP Epitaxial Silicon TransistorFJX4003RFJX4003RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX4004RTF ,PNP Epitaxial Silicon TransistorFJX4004RFJX4004RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX4005RTF ,PNP Epitaxial Silicon TransistorFJX4005RFJX4005RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FST3384WM ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384WM ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384WMX ,10-Bit Low Power Bus SwitchFeaturesThe Fairchild Switch FST3384 provides 10 bits of high-
FJX3906TF
PNP Epitaxial Silicon Transistor
FJX3906 FJX3906 3 General Purpose Transistor 2 1 SOT-323 PNP Epitaxial Silicon Transistor 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -40 V CES V Emitter-Base Voltage -5 V EBO I Collector Current -200 mA C P Collector Power Dissipation 350 mW C T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I = -10μA, I =0 -40 V CBO C E BV * Collector-Emitter Breakdown Voltage I = -1.0mA, I =0 -40 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I =0 -5 V EBO E C I Collector Cut-off Current V = -30V, V = -3V -50 nA CEX CE EB h * DC Current Gain V = -1V, I = -0.1mA 60 FE CE C V = -1V, I = -1mA 80 CE C V = -1V, I = -10mA CE C 100 300 V = -1V, I = -50mA CE C 60 V = -1V, I = -100mA CE C 30 V (sat) * Collector-Emitter Saturation Voltage I = -10mA, I = -1mA -0.25 V CE C B I = -50mA, I = -5mA -0.4 V C B V (sat) * Base-Emitter Saturation Voltage I = -10mA, I = -1mA -0.65 -0.85 V BE C B I = -50mA, I = -5mA -0.95 V C B f Current Gain Bandwidth Product I = -10mA, V = -20V 250 MHz T C CE C Output Capacitance V = -5V, I =0 4.5 pF ob CB E f=1.0MHz NF Noise Figure I = -10μA, V = -5V 4dB C CE R =1KΩ S f=10Hz to 15.7KHz t Turn On Time V = -3V, V = -0.5V 70 ns ON CC BE I = -10mA, I = -1mA C B1 t Turn Off Time V = -3V, I = -10mA 300 ns OFF CC C I =I =1mA B1 B2 * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Marking S2A ©2002 Rev. A2, August 2002
