FJX2222ATF ,NPN Epitaxial Silicon TransistorFJX2222AFJX2222A3General Purpose Transistor• Collector-Emitter Voltage: V = 40VCEO • Collector Diss ..
FJX2907ATF ,PNP Epitaxial Silicon TransistorFJX2907AFJX2907A3General Purpose Transistor21SOT-3231. Base 2. Emitter 3. CollectorPNP Epitaxia ..
FJX2907ATF ,PNP Epitaxial Silicon TransistorFJX2907AFJX2907A3General Purpose Transistor21SOT-3231. Base 2. Emitter 3. CollectorPNP Epitaxia ..
FJX3001RTF ,NPN Epitaxial Silicon TransistorFJX3001RFJX3001RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3002RTF ,NPN Epitaxial Silicon TransistorFJX3002RFJX3002RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3003RTF ,NPN Epitaxial Silicon TransistorFJX3003RFJX3003RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FST3384MTC ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384MTC ,10-Bit Low Power Bus SwitchElectrical CharacteristicsT = −40°C to +85°CAVCCSymbol Parameter Units ConditionTyp(V)Min Max(Note ..
FST3384MTCX ,10-Bit Low Power Bus SwitchFeaturesThe Fairchild Switch FST3384 provides 10 bits of high-
FJX2222ATF
NPN Epitaxial Silicon Transistor
FJX2222A FJX2222A 3 General Purpose Transistor • Collector-Emitter Voltage: V = 40V CEO • Collector Dissipation: P (max) = 325mW C 2 1 SOT-323 NPN Epitaxial Silicon Transistor 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 75 V CBO V Collector-Emitter Voltage 40 V CES V Emitter-Base Voltage 6 V EBO I Collector Current 600 mA C P Collector Power Dissipation 325 mW C T Storage Temperature 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 75 V CBO C E BV Collector-Emitter Breakdown Voltage I =10mA, I =0 40 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I =0 6 V EBO E C I Collector Cut-off Current V =60V, I =0 0.01 μA CBO CB E h * DC Current Gain V =10V, I =0.1mA 35 FE CE C V =10V, I =1mA 50 CE C V =10V, I =10mA 75 CE C V =10V, I =150mA 100 300 CE C V =10V, I =500mA 40 CE C V (sat) * Collector-Emitter Saturation Voltage I =150mA, I =15mA 0.3 V CE C B I =500mA, I =50mA 1.0 V C B V (sat) * Base-Emitter Saturation Voltage I =150mA, I =15mA 0.6 1.2 V BE C B I =500mA, I =50mA 2.0 V C B f Current Gain Bandwidth Product I =20mA, V =20V, f=100MHz 300 MHz T C CE C Output Capacitance V =10V, I =0, f=1MHz 4 8 pF ob CB E NF Noise Figure I =100μA, V =10V 4dB C CE R =1KΩ, f=1kHz S t Turn On Time V =30V, I =150mA 35 ns ON CC C V =0.5V, I =15mA BE B1 t Turn Off Time V =30V, I =150mA 285 ns OFF CC C I =I =15mA B1 B2 * Pulse Test: PW≤300μs, Duty Cycle≤2% Marking S1P ©2002 Rev. B1, August 2002
