FJX1182YTF ,PNP Epitaxial Silicon TransistorFJX1182FJX1182Low Frequency Power Amplifier321SOT-3231. Base 2. Emitter 3. CollectorPNP Epitaxi ..
FJX1182YTF ,PNP Epitaxial Silicon TransistorFJX1182FJX1182Low Frequency Power Amplifier321SOT-3231. Base 2. Emitter 3. CollectorPNP Epitaxi ..
FJX2222ATF ,NPN Epitaxial Silicon TransistorFJX2222AFJX2222A3General Purpose Transistor• Collector-Emitter Voltage: V = 40VCEO • Collector Diss ..
FJX2907ATF ,PNP Epitaxial Silicon TransistorFJX2907AFJX2907A3General Purpose Transistor21SOT-3231. Base 2. Emitter 3. CollectorPNP Epitaxia ..
FJX2907ATF ,PNP Epitaxial Silicon TransistorFJX2907AFJX2907A3General Purpose Transistor21SOT-3231. Base 2. Emitter 3. CollectorPNP Epitaxia ..
FJX3001RTF ,NPN Epitaxial Silicon TransistorFJX3001RFJX3001RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FST3384MTC ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384MTC ,10-Bit Low Power Bus SwitchElectrical CharacteristicsT = −40°C to +85°CAVCCSymbol Parameter Units ConditionTyp(V)Min Max(Note ..
FST3384MTCX ,10-Bit Low Power Bus SwitchFeaturesThe Fairchild Switch FST3384 provides 10 bits of high-
FJX1182OTF-FJX1182YTF
PNP Epitaxial Silicon Transistor
FJX1182 FJX1182 Low Frequency Power Amplifier 3 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -35 V CBO V Collector-Emitter Voltage -30 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -500 mA C P Collector Power Dissipation 150 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = -35, I =0 -0.1 μA CBO CB E I Emitter Cut-off Current V = -5V, I =0 -0.1 μA EBO EB C h DC Current Gain V = -1V, I = -100mA 70 240 FE1 CE C h V = -6V, I = -400mA 25 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = -100mA, I = -10mA -0.1 -0.25 V CE C B V (on) Base-Emitter On Voltage I = -100mA, V = -1V -0.8 -1.0 V BE C CE f Current Gain Bandwidth Product I = -20mA, V = -6V 200 MHz T C CE C Output Capacitance V = -6V, I = 0 13 pF ob CB E f=1MHz h Classification FE Classification O Y h 70 ~ 140 120 ~ 240 FE1 Marking SDX Grade ©2002 Rev. A2, August 2002
