FJPF13009TU ,NPN Silicon TransistorFJPF13009FJPF13009High Voltage Switch Mode Application High Speed Switching Suitable for Switchin ..
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FJPF6806D ,NPN Triple Diffused Planar Silicon TransistorFJPF6806DFJPF6806DHigh Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) ..
FJT1100 ,Ultra Low Leakage Diodes' - . FAIRCHILD SEMICONDUCTOR an yirt_,1yani:rv unanua 7 (r
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FJT44 ,NPN Epitaxial Silicon TransistorFJT44FJT44High Voltage Transistor1SOT-2231.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Tr ..
FST3257MTC ,Quad 2:1 Multiplexer/Demultiplexer Bus SwitchFST3257 Quad 2:1 Multiplexer/Demultiplexer Bus SwitchSeptember 1997Revised December 1999FST3257Quad ..
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FST3257MX ,Quad 2:1 Multiplexer/Demultiplexer Bus SwitchFeaturesThe Fairchild Switch FST3257 is a quad 2:1 high-speed
FJPF13009TU
NPN Silicon Transistor
FJPF13009 FJPF13009 High Voltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 700 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 9 V EBO I Collector Current (DC) 12 A C I Collector Current (Pulse) 24 A CP I Base Current 6 A B P Collector Dissipation (T =25°C) 50 W C C T Junction Temperature 150 °C J T Storage Temperature -65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) Collector-Emitter Sustaining Voltage I = 10mA, I = 0 400 V CEO C B I Emitter Cut-off Current V = 7V, I = 0 1 mA EBO EB C h DC Current Gain V = 5V, I = 5A 8 40 FE CE C V = 5V, I = 8A 6 30 CE C V (sat) Collector-Emitter Saturation Voltage I = 5A, I = 1A 1 V CE C B I = 8A, I = 1.6A 1.5 V C B I = 12A, I = 3A 3 V C B V (sat) Base-Emitter Saturation Voltage I = 5A, I = 1A 1.2 V BE C B I = 8A, I = 1.6A 1.6 V C B C Output Capacitance V = 10V , f = 0.1MHz 180 pF ob CB f Current Gain Bandwidth Product V = 10V, I = 0.5A 4 MHz T CE C t Turn On Time V =125V, I = 8A 1.1 μs ON CC C I = - I = 1.6A t Storage Time B1 B2 3 μs STG R = 15,6Ω L t Fall Time 0.7 μs F * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2003 Rev. A, May 2003
