FJNS4205R ,PNP Epitaxial Silicon TransistorFJNS4205RFJNS4205RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Inte ..
FJP13007H2TU , High Voltage Switch Mode Application
FJP13007H2TU , High Voltage Switch Mode Application
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FST3245QSC ,8-Bit Bus SwitchFST3245 8-Bit Bus SwitchJune 1997Revised March 2005FST32458-Bit Bus Switch
FST3245QSCX ,8-Bit Bus SwitchFST3245 8-Bit Bus SwitchJune 1997Revised March 2005FST32458-Bit Bus Switch
FST3245WM ,8-Bit Bus SwitchFeaturesThe Fairchild Switch FST3245 provides 8-bits of high-
FJNS4205R
PNP Epitaxial Silicon Transistor
FJNS4205R FJNS4205R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R =4.7KΩ, R =10KΩ) 1 2 • Complement to FJNS3205R TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Equivalent Circuit Symbol Parameter Value Units C V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -50 V CEO R1 V Emitter-Base Voltage -10 V B EBO I Collector Current -100 mA C R2 P Collector Power Dissipation 300 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG E Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -10μA, I =0 -50 V CBO C E BV Collector-Emitter Breakdown Voltage I = -100μA, I =0 -50 V CEO C B I Collector Cut-off Current V = -40V, I =0 -0.1 μA CBO CB E h DC Current Gain V = -5V, I = -5mA 30 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA -0.3 V CE C B C Output Capacitance V = -10V, I =0 5.5 pF ob CB E f=1.0MHz f Current Gain Bandwidth Product V = -10V, I = -5mA 200 MHz T CE C V (off) Input Off Voltage V = -5V, I = -100μA-0.3 V I CE C V (on) Input On Voltage V = -0.3V, I = -20mA -2.5 V I CE C R Input Resistor 3.2 4.7 6.2 KΩ 1 R /R Resistor Ratio 0.42 0.47 0.52 1 2 ©2002 Rev. A, July 2002
