FJN3303R ,NPN Epitaxial Silicon TransistorFJN3303RFJN3303RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN3303RBU , Switching Application (Bias Resistor Built In)
FJN3306R ,NPN Epitaxial Silicon TransistorFJN3306RFJN3306RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN3306R ,NPN Epitaxial Silicon TransistorFJN3306RFJN3306RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN3307R ,NPN Epitaxial Silicon TransistorFJN3307RFJN3307RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN3307R ,NPN Epitaxial Silicon TransistorFJN3307RFJN3307RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FST32253QSC ,Dual 4:1 Multiplexer/Demultiplexer Bus Switch with 25 Ohm Series Resistors in OutputsFeaturesThe Fairchild Switch FST32253 is a dual 4:1 high-speed
FJN3303R
NPN Epitaxial Silicon Transistor
FJN3303R FJN3303R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R =22KΩ, R =22KΩ) 1 2 • Complement to FJN4303R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Equivalent Circuit Symbol Parameter Value Units C V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 50 V R1 CEO B V Emitter-Base Voltage 10 V EBO I Collector Current 100 mA C R2 P Collector Power Dissipation 300 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG E Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 50 V CBO C E BV Collector-Emitter Breakdown Voltage I =100μA, I =0 50 V CEO C B I Collector Cut-off Current V =40V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =5mA 56 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA 0.3 V CE C B f Current Gain Bandwidth Product V =10V, I =5mA 250 MHz T CE C C Output Capacitance V =10V, I =0 3.7 pF ob CB E f=1.0MHz V (off) Input Off Voltage V =5V, I =100μA0.5 V I CE C V (on) Input On Voltage V =0.3V, I =5mA 3.0 V I CE C R Input Resistor 15 22 29 KΩ 1 R /R Resistor Ratio 0.9 1 1.1 1 2 ©2002 Rev. A, July 2002
