FJI5603D ,NPN Silicon TransistorElectrical Characteristics* T =25°C unless otherwise noted aSymbol Parameter Test Condition Min. Ty ..
FJL4215OTU ,PNP Epitaxial Silicon TransistorFJL4215FJL4215Audio Power Amplifier High Current Capability I = -15A)C High Power DissipationWid ..
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FST3126MTC ,4-Bit Bus SwitchFeaturesThe Fairchild Switch FST3126 provides four high-speed
FJI5603D
NPN Silicon Transistor
FJI5603D — NPN Silicon Transistor June 2008 FJI5603D NPN Silicon Transistor Applications Equivalent Circuit • High Voltage and High Speed Power Switch Application C • Electronic Ballast Application Features B • Wide Safe Operating Area 2 • Small Variance in Storage Time I -PAK 1 E • Built-in Free Wheeling Diode 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* T = 25°C unless otherwise noted a Symbol Parameter Ratings Units BV Collector-Base Voltage 1600 V CBO BV Collector-Emitter Voltage 800 V CEO BV Emitter-Base Voltage 12 V EBO I Collector Current(DC) 3 A C I Collector Current(Pulse)** 6 A CP I Base Current 2 A B I Base Current(Pulse)** 4 A BP P Power Dissipation(T =25°C) 100 W D C T Junction Temperature 150 °C J T Storage Junction Temperature Range - 65 ~ +150 °C STG EAS Avalanche Energy(T =25°C, 8mH) 3.5 mJ j * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ** Pulse Test : Pulse Width = 5ms, Duty Cycle < 10% Thermal Characteristics* T =25°C unless otherwise noted a Symbol Parameter Ratings Units R Thermal Resistance, Junction to Case 1.25 °C/W θjc R Thermal Resistance, Junction to Ambient 80 °C/W θja * Device mounted on minimum pad size Ordering Information Part Number Marking Package Packing Method Remarks FJI5603DTU J5603D I2PAK TUBE © 2008 FJI5603D Rev. A3 1
