FJC1386RTF ,PNP Epitaxial Silicon TransistorFJC1386FJC1386Low Saturation Transistor Medium Power Amplifier • Complement ..
FJC1963QTF ,NPN Epitaxial Silicon TransistorApplications• Complement to FJC1308• High Collector Current • Low Collector-Emitter Saturation Volt ..
FJC1963QTF ,NPN Epitaxial Silicon TransistorApplications• Complement to FJC1308• High Collector Current • Low Collector-Emitter Saturation Volt ..
FJC1963STF ,NPN Epitaxial Silicon TransistorFJC1963FJC1963Audio Power Amplifier
FJC2383 ,NPN Epitaxial Silicon TransistorFJC2383FJC2383Color TV Audio Output & Color TV Vertical Deflection OutputSOT-89NPN Epitaxial Silico ..
FJC2383YTF ,NPN Epitaxial Silicon TransistorFJC2383FJC2383Color TV Audio Output & Color TV Vertical Deflection OutputSOT-89NPN Epitaxial Silico ..
FST30100 , 30 AMP SCHOTTKY BARRIER RECTIFIER
FST3060 , 30 AMP SCHOTTKY BARRIER RECTIFIER
FST3125 ,4-Bit Bus SwitchFST3125 4-Bit Bus SwitchAugust 1997Revised January 2001FST31254-Bit Bus Switch
FST3125M ,4-Bit Bus SwitchFST3125 4-Bit Bus SwitchAugust 1997Revised January 2005FST31254-Bit Bus Switch
FST3125MTC ,4-Bit Bus SwitchFeaturesThe Fairchild Switch FST3125 provides four high-speed
FJC1386QTF-FJC1386RTF
PNP Epitaxial Silicon Transistor
FJC1386 FJC1386 Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage -30 V CBO V Collector-Emitter Voltage -20 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current (DC) -5 A C P Power Dissipation(T =25°C) 0.5 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =-50μA, I =0 -30 V CBO C E BV Collector-Emitter Breakdown Voltage I =-1mA, I =0 -20 V CEO C B BV Emitter-Base Breakdown Voltage I =-50μA, I =0 -6 V EBO E C I Collector Cut-off Current V =-20V, V =0 -0.5 μA CBO CB B I Emitter Cut-off Current V =-5V, I =0 -0.5 μA EBO EB C h DC Current Gain V =-2V, I =-0.5A 80 390 FE CE C V (sat) Collector-Emitter Saturation Voltage I =-4, I =-0.1A -1.0 V CE C B V (sat) Base-Emitter Saturation Voltage I =-4, I =-0.1A -1.5 V BE C B Thermal Characteristics T =25°C unless otherwise noted C Symbol Parameter Max Units R Thermal Resistance, Junction to Ambient 250 °C/W θjA h Classification FE Classification P Q R h 80 ~ 180 120 ~ 270 180 ~ 390 FE Marking FAP h grade FE ©2002 Rev. A1, August 2002
