FJAF6920 ,NPN Triple Diffused Planar Silicon TransistorFJAF6920FJAF6920High Voltage Color Display Horizontal Deflection Output • High Collector-Base Bre ..
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FJAF6920
NPN Triple Diffused Planar Silicon Transistor
FJAF6920 FJAF6920 High Voltage Color Display Horizontal Deflection Output • High Collector-Base Breakdown Voltage : BV = 1700V CBO • Low Saturation Voltage : V (sat) = 3V (Max.) CE • For Color Monitor TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Rating Units V Collector-Base Voltage 1700 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current (DC) 20 A C I * Collector Current (Pulse) 30 A CP P Collector Dissipation 60 W C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG * Pulse Test: PW=300μs, duty Cycle=2% Pulsed Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Units I Collector Cut-off Current V =1400V, R =0 1 mA CES CB BE I Collector Cut-off Current V =800V, I =0 10 μA CBO CB E I Emitter Cut-off Current V =4V, I =0 1 mA EBO EB C BV Collector-Base Breakdown Voltage I =500μA, I =0 1700 V CBO C E BV Collector-Emitter Breakdown Voltage I =5mA, I =0 800 V CEO C B BV Emitter-Base Breakdown Voltage I =500μA, I =0 6 V EBO E C h DC Current Gain V =5V, I =1A 8 FE1 CE C h V =5V, I =11A 5.5 8.5 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I =11A, I =2.75A 3 V CE C B V (sat) Base-Emitter Saturation Voltage I =11A, I =2.75A 1.5 V BE C B t * Storage Time V =200V, I =10A, R =20Ω 3 μs STG CC C L I =2.0A, I = - 4.0A t * Fall Time B1 B2 0.15 0.2 μs F * Pulse Test: PW=20μs, duty Cycle=1% Pulsed Thermal Characteristics T =25°C unless otherwise noted C Symbol Parameter Typ Max Units R Thermal Resistance, Junction to Case 2.08 °C/W θjC ©2002 Rev. A, September2002
