FGL40N150D ,IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
FGL60N100BNTD ,1000V, 60A NPT-Trench IGBTElectrical Characteristics of IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Conditio ..
FGP20N60UFD ,600V, 20A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGP30N6S2 ,600V, SMPS II Series N-Channel IGBTapplications where low conduction loss, fast Low Gate Charge . . . . . . . . . 23nC at V = 15VGEs ..
FGP40N6S2 ,600V, SMPS II Series N-Channel IGBTapplications where low conduction Low Gate Charge . . . . . . . . . 35nC at V = 15VGEloss, fast s ..
FGPF30N30 , 300V, 30A PDP IGBT
FSAV433MTCX , High-Bandwidth (550MHz) Three-Channel 3:1 Video Switch
FSAV433MTCX , High-Bandwidth (550MHz) Three-Channel 3:1 Video Switch
FSAV450 ,800MHz Quad SPDT LCD/Plasma Video SwitchApplicationsdifferential phases maintain the image integrity for video
FSAV450 ,800MHz Quad SPDT LCD/Plasma Video SwitchFeaturesFSAV450 is a 5V, high performance analog video switch
FGL40N150D
IGBT
FGL40N150D IGBT FGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor (IGBT) • High speed switching provides low conduction and switching losses. • Low saturation voltage : V = 3.5 V @ I = 40A CE(sat) C The FGL40N150D is designed for induction heating • High input impedance applications. • Built-in fast recovery diode Applications Home appliances, induction heaters, IH JAR, and microwave ovens. C C G G TO-264 E E G C E Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Description FGL40N150D Units V Collector-Emitter Voltage 1500 V CES V Gate-Emitter Voltage ± 25 V GES Collector Current @ T = 25°C40 A C I C Collector Current @ T = 100°C20 A C I Pulsed Collector Current 120 A CM (1) I Diode Continuous Forward Current @ T = 100°C10 A F C I Diode Maximum Forward Current 100 A FM P Maximum Power Dissipation @ T = 25°C 200 W D C Maximum Power Dissipation @ T = 100°C80 W C T Operating Junction Temperature -55 to +150 °C J T Storage Temperature Range -55 to +150 °C stg Maximum Lead Temp. for Soldering T 300 °C L Purposes, 1/8” from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R (IGBT) Thermal Resistance, Junction-to-Case -- 0.625 °C/W θJC R (DIODE) Thermal Resistance, Junction-to-Case -- 0.83 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 25 °C/W θJA ©2002 FGL40N150D Rev. A1
