FGH40N120AN ,1200V NPT IGBTApplicationsInduction Heating, UPS, AC & DC motor controls and generalpurpose inverters.ECCGGCOLLEC ..
FGH40N60SFD ,600V, 40A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGH40N60SFDTU , 600 V, 40 A Field Stop IGBT
FGH40N60SMDF ,600V, 40A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGH40N60UF ,600V, 40A, Field Stop IGBTApplications• Solar Inverter, UPS, Welder, PFCECGCOLLECTOR(FLANGE)Absolute Maximum RatingsSymbol De ..
FGH40N6S2 ,600V, SMPS II Series N-Channel IGBTapplications where low conduction Low Gate Charge . . . . . . . . . 35nC at V = 15VGEloss, fast s ..
FSAV330MX ,Low On Resistance Quad SPDT Wide Bandwidth Video SwitchFSAV330 Low On Resistance Quad SPDT Wide Bandwidth Video SwitchApril 2002Revised October 2002FSAV33 ..
FSAV330MX ,Low On Resistance Quad SPDT Wide Bandwidth Video SwitchFSAV330 Low On Resistance Quad SPDT Wide Bandwidth Video SwitchApril 2002Revised October 2002FSAV33 ..
FSAV330QSC ,Low On Resistance Quad SPDT Wide Bandwidth Video SwitchFSAV330 Low On Resistance Quad SPDT Wide Bandwidth Video SwitchApril 2002Revised October 2002FSAV33 ..
FSAV330QSC ,Low On Resistance Quad SPDT Wide Bandwidth Video SwitchFeaturesThe Fairchild Video Switch FSAV330 is a quad single pole/
FGH40N120AN
1200V NPT IGBT
FGH40N120AN 1200V NPT IGBT July 2008 ® IGBT FGH40N120AN 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AN series of IGBTs pro- vides low conduction and switching losses. The AN series offers • Low saturation voltage : V = 2.6 V @ I = 40A CE(sat) C an solution for application such as induction heating (IH), motor • High input impedance control, general purpose inverters and uninterruptible power supplies (UPS). •RoHS complaint Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Parameter FGH40N120AN Units V Collector-Emitter Voltage 1200 V CES V Gate-Emitter Voltage ±25 V GES Collector Current @T = 25°C64 A C I C Collector Current @T = 100°C40 A C I Pulsed Collector Current 160 A CM(1) Maximum Power Dissipation @T = 25°C 417 W C P D Maximum Power Dissipation @T = 100°C 167 W C Short Circuit Withstand Time, SCWT 10 µs V = 600V, V = 15V, T = 125°C CE GE C T Operating Junction Temperature -55 to +150 °C J T Storage Temperature Range -55 to +150 °C STG Maximum Lead Temp. for Soldering T 300 °C L Purposes, 1/8” from Case for 5 seconds Notes: (1) Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R (IGBT) Thermal Resistance, Junction-to-Case -- 0.3 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2006 1 FGH40N120AN Rev. A2
