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FGB20N60SFDFSCN/a20000avai600V, 20A, Field Stop IGBT


FGB20N60SFD ,600V, 20A, Field Stop IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
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FGB20N6S2T ,600V, SMPS II Series N-Channel IGBT, TO-263/D2PAK Packageapplications where low Low Gate Charge . . . . . . . . . 30nC at V = 15VGEconduction loss, fast s ..
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FGB3040CS , EcoSPARKTM 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
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FSAM15SH60A ,15A, Smart Power Module (SPM)FeaturesFSAM15SH60A is an advanced smart power module  UL Certified No. E209204(SPM) that Fairchil ..
FSAM15SL60 ,SPM TM (Smart Power Module)applicationscircuit protection and drive matched to low-loss IGBTs.• Single-grounded power supply d ..
FSAM15SL60 ,SPM TM (Smart Power Module)FeaturesFSAM15SL60 is an advanced smart power module (SPM) • UL Certified No. E209204that Fairchild ..
FSAM15SM60A ,15A, Smart Power Module (SPM)applicationsoptimized circuit protection and drive matched to low-loss Single-grounded power suppl ..
FSAM20SL60 ,SPM TM (Smart Power Module)FeaturesFSAM20SL60 is an advanced smart power module (SPM) • UL Certified No. E209204that Fairchild ..
FSAM30SM60A ,30A, Smart Power Module (SPM)applicationsoptimized circuit protection and drive matched to low-loss Single-grounded power suppl ..


FGB20N60SFD
600V, 20A, Field Stop IGBT
FGB20N60SFD 600 V, 20 A Field Stop IGBT April 2013 FGB20N60SFD 600 V, 20 A Field Stop IGBT Features General Description ® • High Current Capability Using novel field stop IGBT technology, Fairchild ’s field stop IGBTs offer the optimum performance for solar inverter, UPS, • Low Saturation Voltage: V = 2.2 V @ I = 20 A CE(sat) C welder and PFC applications where low conduction and switch- • High Input Impedance ing losses are essential. • Fast Switching : E = 8 uJ/A OFF •RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC C COLLECTOR (FLANGE) G 2 TO-263AB/D -PAK E G E C Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 600 V CES V Gate to Emitter Voltage  20 V GES o Collector Current @ T = 25C40 A C I C o Collector Current @ T = 100C20 A C o I Pulsed Collector Current 60 A CM (1) @ T = 25 C C o Diode Forward Current @ T = 25C20 A C I F o Diode Forward Current @ T = 100C10 A C I Pulsed Diode Maximum Forward Current 60 A FM(1) o Maximum Power Dissipation @ T = 25C208 W C P D o Maximum Power Dissipation @ T = 100C83 W C o T Operating Junction Temperature -55 to +150 C J o T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature ©2011 1 FGB20N60SFD Rev. C0
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