FGA15N120ANTDTU ,1200V, 15A, NPT Trench IGBTFeatures Description®• NPT Trench Technology, Positive temperature coefficient Using Fairchild 's p ..
FGA180N33ATDTU , 330 V PDP Trench IGBT
FGA180N33ATDTU , 330 V PDP Trench IGBT
FGA20N120FTD ,1200V, 20A, Field Stop Trench IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condi ..
FGA20S120M ,1200V, 20A, Shorted-anode IGBTApplications• Induction Heating, Microwave OvenCGTO-3PNEG C EAbsolute Maximum Ratings T = 25°C unle ..
FGA25N120AN ,Discrete, NPT IGBTApplicationsInduction Heating, UPS, AC & DC motor controls and general purpose inverters.C CG GE ET ..
FSAL200 ,Quad 2:1 Multiplexer/Demultiplexer Wide Bandwidth LAN SwitchFSAL200 Quad 2:1 Multiplexer/Demultiplexer Wide Bandwidth LAN SwitchJanuary 2002Revised August 2002 ..
FSAL200QSC ,Wide Bandwidth Quad 2:1 Analog Multiplexer/Demultiplexer SwitchFeaturesThe Fairchild Switch FSAL200 is a rail-to-rail quad 2:1
FGA15N120ANTDTU
1200V, 15A, NPT Trench IGBT
FGA15N120ANTD / FGA15N120ANTD_F109 1200 V, 15 A NPT Trench IGBT April 2013 FGA15N120ANTD / FGA15N120ANTD_F109 1200 V, 15 A NPT Trench IGBT Features Description ® • NPT Trench Technology, Positive temperature coefficient Using Fairchild 's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction • Low Saturation Voltage: V = 1.9 V CE(sat), typ and switching performances, high avalanche ruggedness and @ I = 15 A and T = 25C C C easy parallel operation. • Low switching loss: E = 0.6mJ off, typ This device is well suited for the resonant or soft switching appli- @ I = 15 A and T = 25C C C cation such as induction heating, microwave oven. • Extremely Enhanced Avalanche Capability C C G G TO-3P E E G C E Absolute Maximum Ratings Symbol Description FGA15N120ANTD Unit V Collector-Emitter Voltage 1200 V CES V Gate-Emitter Voltage 20 V GES I Collector Current @ T = 25C 30 A C C Collector Current @ T = 100C 15 A C I Pulsed Collector Current (Note 1) 45 A CM I Diode Continuous Forward Current @ T = 100C 15 A F C I Diode Maximum Forward Current 45 A FM P Maximum Power Dissipation @ T = 25C 186 W D C Maximum Power Dissipation @ T = 100C 74 W C T Operating Junction Temperature -55 to +150 C J T Storage Temperature Range -55 to +150 C stg T Maximum Lead Temp. for soldering 300 C L Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ. Max. Unit R Thermal Resistance, Junction-to-Case for IGBT -- 0.67 C/W JC R Thermal Resistance, Junction-to-Case for Diode -- 2.88 C/W JC R Thermal Resistance, Junction-to-Ambient -- 40 C/W JA Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature ©2006 1 FGA15N120ANTD / FGA15N120ANTD_F109 Rev. C0
