FFB3906 ,PNP Multi-Chip General Purpose Amplifierapplications involving pulsed or low duty cycle operations.3) All voltages (V) and currents (A) are ..
FFB3906 ,PNP Multi-Chip General Purpose Amplifierapplications at collector currents of 10 µ A to 100 mA. Sourcedfrom Process 66.Absolute Maximum Rat ..
FFB3946 ,NPN & PNP General Purpose AmplifierFFB3946 / FMB3946FFB3946 FMB3946E2C2B2 TRANSISTOR TYPEE1C1C1 B1 E1 NPNC1C2 B2 E2 ..
FFB5551 ,NPN Multi-Chip General Purpose AmplifierFFB5551FFB5551E2B2Dual-Chip NPN General Purpose Amplifier This device is deisgned for general purp ..
FFB5551 ,NPN Multi-Chip General Purpose Amplifierapplications involving pulsed or low duty cycle operations
FFH15S60STU , Stealth 2 Rectifier
FSA1156L6X ,Low RON Low Voltage SPST Analog SwitchFeaturesThe FSA1156 and FSA1157 are high performance Single
FFB3906
PNP Multi-Chip General Purpose Amplifier
FFB3906 / FMB3906 / MMPQ3906 FMB3906 FFB3906 MMPQ3906 E2 B4 C2 E4 B2 E1 B3 E3 C1 B2 C1 E2 B1 E1 C4 C2 C4 B2 C3 SC70-6 B1 E2 C3 pin #1 E1 Mark: .2A C2 pin #1 B1 C2 C1 NOTE: The pinouts are symmetrical; pin 1 and pin C1 SOIC-16 pin #1 SuperSOT-6 4 are interchangeable. Units inside the carrier can Mark: .2A Mark: MMPQ3906 be of either orientation and will not affect the Dot denotes pin #1 functionality of the device. PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 μA to 100 mA. Sourced from Process 66. Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 5.0 V 4 EBO I Collector Current - Continuous 200 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T ° J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics T = 25°C unless otherwise noted A Symbol Characteristic Max Units FFB3906 FMB3906 MMPQ3906 P Total Device Dissipation 300 700 1,000 mW D 2.4 5.6 8.0 Derate above 25°C mW/°C R Thermal Resistance, Junction to Ambient 415 180 °C/W θJA Effective 4 Die 125 °C/W Each Die 240 °C/W 1998
