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FFA30U20DN Fast Delivery,Good Price
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FFA30U20DNFSCN/a1240avaiULTRA FAST RECOVERY POWER RECTIFIER


FFA30U20DN ,ULTRA FAST RECOVERY POWER RECTIFIERApplications Power switching circuitsTO-3P Output rectifiers1 2 3 Freewheeling diodes  ..
FFA30U20DNTU ,30A/200V Ultra Fast Recovery RectifiersFeatures• Ultrafast with soft recovery Low forward voltage
FFA30U20DNTU ,30A/200V Ultra Fast Recovery RectifiersApplications Power switching circuitsTO-3P Output rectifiers1 2 3 Freewheeling diodes  ..
FFA30U60DN ,ULTRA FAST RECOVERY POWER RECTIFIERFeatures• High voltage and high reliability High speed switching Low forward voltage
FFA40U60DNTU ,40A/600V Ultra Fast Recovery RectifierApplications General purposeTO-3P Switching mode power supply1 2 3 Free-wheeling diode f ..
FFA60UP20DN ,30A/200V Ultra Fast Recovery Rectifier Co-PakApplications• Power switching circuits 1. Anode 2.Cathode 3. Anode• Output rectifiers• Freew ..
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FSA1156L6X ,Low RON Low Voltage SPST Analog SwitchFeaturesThe FSA1156 and FSA1157 are high performance Single

FFA30U20DN
ULTRA FAST RECOVERY POWER RECTIFIER
FFA30U20DN FFA30U20DN Features • Ultrafast with soft recovery Low forward voltage Applications Power switching circuits TO-3P Output rectifiers 1 2 3 Freewheeling diodes Switching mode power supply 1. Anode 2.Cathode 3. Anode ULTRA FAST RECOVERY POWER RECTIFIER Absolute Maximum Ratings (per diode) T =25° °C unless otherwise noted ° ° C Symbol Parameter Value Units V Peak Repetitive Reverse Voltage 200 V RRM I Average Rectified Forward Current @ T = 100°C30 A F(AV) C I Non-repetitive Peak Surge Current 300 A FSM 60Hz Single Half-Sine Wave T T Operating Junction and Storage Temperature - 65 to +150 °C J, STG Thermal Characteristics Symbol Parameter Value Units R Maximum Thermal Resistance, Junction to Case 1.4 °C/W θJC Electrical Characteristics (per diode) T =25 ° °C unless otherwise noted ° ° C Symbol Parameter Min. Typ. Max. Units V Maximum Instantaneous Forward Voltage V FM * I = 30A T = 25 °C - - 1.2 F C I = 30A T = 100 °C - - 1.0 F C I Maximum Instantaneous Reverse Current μA RM * @ rated V T = 25 °C - - 30 R C T = 100 °C - - 300 C t Maximum Reverse Recovery Time - - 40 ns rr I Maximum Reverse Recovery Current - - 4.0 A rr Q Maximum Reverse Recovery Charge - - 80 nC rr (I =30A, di/dt = 200A/μs) F W Avalanche Energy 0.5 - - mJ AVL * Pulse Test: Pulse Width=300μs, Duty Cycle=2% ©2000 Fairchild Semiconductor International Rev. F, September 2000
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