FEP16BTA ,Fast Rectifiers (Glass Passivated)FEP16AT - FEP16JTPIN 1+CASEPIN 3FEP16AT - FEP16JT PIN 2Positive CT
FEP16BTD ,Fast Rectifiers (Glass Passivated)Features PIN 1-CASEPIN 3• Low forward voltage drop.PIN 2Negative CTSuffix "A"• High surge current ..
FEP16CT ,Fast Rectifiers (Glass Passivated)Thermal Characteristics (T = 25°C unless otherwise noted)CParameter Symbol FEP FEPF FEPB UnitTypica ..
FEP16DT ,Dual Ultrafast Plastic Rectifier, Forward Current 16A,Thermal Characteristics (T = 25°C unless otherwise noted)CParameter Symbol FEP FEPF FEPB UnitTypica ..
FEP16DT.. ,Dual Ultrafast Plastic Rectifier, Forward Current 16A,Dimensions in inchesand (millimeters)FEP16JT, FEPF16JT, FEPB16JT SeriesVishay Semiconductorsformerl ..
FEP16DTA ,Fast Rectifiers (Glass Passivated)Features PIN 1-CASEPIN 3• Low forward voltage drop.PIN 2Negative CTSuffix "A"• High surge current ..
FS6377-01G , Programmable 3-PLL Clock Generator IC
FS6377-01G , Programmable 3-PLL Clock Generator IC
FS6377-01G-XTP , Programmable 3-PLL Clock Generator IC
FS6M12653RTCTU ,12A/650V 70KHz Power SwitchBlock DiagramVCC Drain 3 3 3 3 1 1 1 1VrefInternal OSCVrefBiasSoftStart5 5 5 5VrefUVLO Burst mode ..
FS6M12653RTC-YDT ,Fairchild Power Switch(FPS)Block DiagramVCC Drain 3 3 3 3 1 1 1 1VrefInternal OSCVrefBiasSoftStart5 5 5 5VrefUVLO Burst mode ..
FS6S0965RCYDTU ,Fairchild Power Switch(SPS)Block Diagram 3 3 3 3 1 1 1 1VrefVpp=5.8/7.2VInternal OSC VrefBias5 5 5 5Vref UVLOBurst modeVfbcon ..
FEP16BTA
Fast Rectifiers (Glass Passivated)
FEP16AT - FEP16JT PIN 1 + CASE PIN 3 FEP16AT - FEP16JT PIN 2 Positive CT Features PIN 1 - CASE PIN 3 • Low forward voltage drop. PIN 2 Negative CT Suffix "A" • High surge current capacity. 1 2 • High current capability. PIN 1 3 AC TO-220AB CASE • High reliability. PIN 3 PIN 2 Doubler Suffix "D" Fast Rectifiers (Glass Passivated) Absolute Maximum Ratings* T = 25°C unless otherwise noted A Value Symbol Units Parameter 16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT V Maximum Repetitive Reverse 50 100 150 200 300 400 500 600 V RRM Voltage I Average Rectified Forward Current, F(AV) 16 A .375 " lead length @ T = 100°C A I Non-repetitive Peak Forward Surge FSM Current 200 A 8.3 ms Single Half-Sine-Wave Storage Temperature Range -55 to +150 T °C stg T Operating Junction Temperature -55 to +150 °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 8.33 W D R Thermal Resistance, Junction to Ambient 15 °C/W θJA Thermal Resistance, Junction to Lead 2.2 R °C/W θJL Electrical Characteristics T = 25°C unless otherwise noted A Device Symbol Units Parameter 16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT V Forward Voltage @ 8.0A 0.95 1.3 1.5 V F t Reverse Recovery Time rr 35 50 ns I = 0.5 A, I = 1.0 A, I = 0.25 A F R RR I Reverse Current @ rated V R R 10 μA T = 25 C ° A 500 μA T = 100°C A C Total Capacitance pF T 85 60 V = 4.0. f = 1.0 MHz R 2001 FEP16AT - FEP16JT, Rev. C
