FDZ7064AS ,30V N-Channel PowerTrench SyncFET BGA MOSFETApplications DS(ON) DC/DC convertersPin 1DD D D DD DD S S S S DD S S S S DGD S S S S DD G S S S DPi ..
FDZ7064S ,30V N-Channel PowerTrench SyncFET BGA MOSFETApplications · High power and current handling capability. · DC/DC converters DPin 1D D D DD DD S S ..
FE1B ,Ultra Fast Sinterglass Diode Document Number 860682 Rev. 2, 28-Jan-03Average Forward Rectified Current (A)Peak Forward Surge Cu ..
FE1D ,GLASS PASSIVATED FAST EFFICIENT RECTIFIERFeatures • High temperature metallurgically bonded con-struction Cavity-free glass passivated jun ..
FE2B ,Ultra Fast Sinterglass Diode Document Number 860694 Rev. 2, 28-Jan-03FE2A to FE2DVISHAYVishay SemiconductorsOzone Depleting Sub ..
FE2C ,Ultra Fast Sinterglass DiodeElectrical CharacteristicsT = 25 °C, unless otherwise specified ambParameter Test condition Symbol ..
FS450 , i-Net TV Interface Video Processor
FS450R12KE3 , EconoPACK with trench/fieldstop IGBT3 and EmCon High Efficiency diode
FS450R17KE3 , EconoPACK module with trench/fieldstop IGBT and EmCon3 diode
FS4KM-12 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS50R06W1E3 , EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC
FS50R12KT3 , EconoPACK2 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FDZ7064AS
30V N-Channel PowerTrench SyncFET BGA MOSFET
FDZ7064AS 30V N-Channel PowerTrench® SyncFET™ BGA MOSFET F7064AS December 2004 FDZ7064AS ® 30V N-Channel PowerTrench SyncFET™ BGA MOSFET Features General Description ■ 13.5 A, 30 V. R = 5.6 mΩ @ V = 10 V This MOSFET is designed to replace a single MOSFET and DS(ON) GS R = 7.1 mΩ @ V = 4.5 V parallel Schottky diode in synchronous DC:DC power supplies. DS(ON) GS 2 Combining Fairchild’s 30V PowerTrench SyncFET process with ■ Occupies only 14 mm of PCB area. Only 42% of the area of state of the art BGA packaging, the FDZ7064AS minimizes both SO-8 PCB space and R . This BGA SyncFET embodies a DS(ON) ■ Ultra-thin package: less than 0.76 mm height when mounted breakthrough in both packaging and power MOSFET integration to PCB which enables the device to combine excellent thermal transfer 2 ■ 3.5 x 4 mm Footprint characteristics, high current handling capability, ultra-low profile ■ High power and current handling capability. packaging, low gate charge, ultra-low reverse recovery charge and low R . Applications DS(ON) ■ DC/DC converters Pin 1 D D D D D D D D S S S S D D S S S S D G D S S S S D D G S S S D Pin 1 S Bottom Top Absolute Maximum Ratings T =25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 13.5 A D – Pulsed 60 P Power Dissipation (Steady State) (Note 1a) 2.2 W D T , T Operating and Storage Junction Temperature Range –55 to +150 °C J stg Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 56 °C/W θJA R Thermal Resistance, Junction-to-Ball (Note 1) 4.5 θJB R Thermal Resistance, Junction-to-Case (Note 1) 0.6 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 7064AS FDZ7064AS 13” 12mm 3000 ©2004 1 FDZ7064AS Rev. A
