FDZ298N ,20V N-Channel 2.5V Specified PowerTrench BGA MOSFETFeatures Combining Fairchild’s advanced 2.5V specified · 6 A, 20 V R = 27 mW @ V = 4.5 V DS(ON) GS ..
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FDZ298N
20V N-Channel 2.5V Specified PowerTrench BGA MOSFET
February 2004
Ó2004 FDZ298N Rev B1 (W)
FDZ298N
N-Channel 2.5 V Specified PowerTrench® BGA MOSFET
General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ298N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a
breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON).
Applications Battery management Battery protection
Features 6 A, 20 V RDS(ON) = 27 mW @ VGS = 4.5 V RDS(ON) = 39 mW @ VGS = 2.5 V Occupies only 2.25 mm2 of PCB area.
Less than 50% of the area of a SSOT-6 Ultra-thin package: less than 0.80 mm height when
mounted to PCB Outstanding thermal transfer characteristics:
4 times better than SSOT-6 Ultra-low Qg x RDS(ON) figure-of-merit High power and current handling capability.
SSDD
Bottom
Pin1Top
S
Absolute Maximum Ratings TA=25o C unless otherwise noted
Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V
VGSS Gate-Source Voltage ±12 V
ID Drain Current – Continuous (Note 1a) 6 A – Pulsed 10
PD Power Dissipation for Single Operation (Note 1a) 1.7 W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 72 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity FDZ298N 7” 8mm 3000 units
