FDZ293P ,-20V P-Channel 2.5 V Specified PowerTrench BGA MOSFETGeneral Descriptionto PCBCombining Fairchild’s advanced 2.5V specified PowerTrench Outstanding ther ..
FDZ294N ,N-Channel 2.5V Specified PowerTrench® BGA MOSFETApplications • Outstanding thermal transfer characteristics: • Battery management 4 times better t ..
FDZ298N ,20V N-Channel 2.5V Specified PowerTrench BGA MOSFETFeatures Combining Fairchild’s advanced 2.5V specified · 6 A, 20 V R = 27 mW @ V = 4.5 V DS(ON) GS ..
FDZ298N ,20V N-Channel 2.5V Specified PowerTrench BGA MOSFETApplications · Outstanding thermal transfer characteristics: · Battery management 4 times better t ..
FDZ299P ,20V P-Channel 2.5 V Specified PowerTrench BGA MOSFETFeatures Combining Fairchild’s advanced 2.5V specified · –4.6 A, –20 V R = 55 mW @ V = –4.5 V DS(O ..
FDZ372NZ , N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
FS3UM-18A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS401LF , PC to TV Video Scan Converters
FS40SM-5 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS40SM-5 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS40SM-6 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS450 , i-Net TV Interface Video Processor
FDZ293P
-20V P-Channel 2.5 V Specified PowerTrench BGA MOSFET
FDZ293P P-Channel 2.5 V Specified PowerTrench® BGA MOSFET December 2004 FDZ293P ® P-Channel 2.5 V Specified PowerTrench BGA MOSFET Features Applications � –4.6 A, –20 V R = 46 mΩ @ V = –4.5 V � Battery management DS(ON) GS R = 72 mΩ @ V = –2.5 V DS(ON) GS � Load switch 2 � Occupies only 2.25 mm of PCB area. � Battery protection Less than 50% of the area of a SSOT-6 � Ultra-thin package: less than 0.85 mm height when mounted General Description to PCB Combining Fairchild’s advanced 2.5V specified PowerTrench � Outstanding thermal transfer characteristics: process with state of the art BGA packaging, the FDZ293P min- 4 times better than SSOT-6 imizes both PCB space and R . This BGA MOSFET DS(ON) � Ultra-low Q x R figure-of-merit g DS(ON) embodies a breakthrough in packaging technology which � High power and current handling capability. enables the device to combine excellent thermal transfer char- acteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low R . DS(ON) S GATE G D Bottom Top ©2004 1 FDZ293P Rev. C
